➀ Texas Instruments' TIDA-010954 reference design presents a 600W bidirectional microinverter using GaN technology, achieving 640 W/L power density without heat sinks;

➁ It combines solar PV and battery storage integration through cycloconverter-based AC-DAB topology, supporting 60V DC input and 230V AC output with reactive power compensation;

➂ Features digital control via TMS320F28P55x microcontroller and high-efficiency LMG2100R026 GaN modules, ideal for residential energy systems and grid-tied applications.

➀ Infineon's REF_600W_FBFB_XDPP1100 is a 600 W isolated DC-DC reference design targeting telecom, server, and industrial applications, utilizing a digital-controlled full-bridge topology with 96% peak efficiency and 22 W/cm³ power density;

➁ The design integrates XDPP1100 digital controller, OptiMOS MOSFETs, and EiceDRIVER gate drivers, supporting 36-72 V input range, PMBus/I2C communication, and ±1% output voltage accuracy across -40°C to 125°C;

➂ Features include fast transient response, active current sharing, GUI-based customization, and reduced BOM, with full design documentation available for accelerated development.

➀ Texas Instruments' TIDA-01407 is a 400-W phase-shifted full-bridge converter designed for automotive applications, converting 36–60 V DC input to a stable 12 V output with high efficiency;

➁ Features zero-voltage switching (ZVS), synchronous rectification, and transformer isolation to prevent battery shorting, ensuring reliability under automotive voltage fluctuations;

➂ Includes gate drivers for 120 V operation, programmable delays for load adaptability, and comprehensive design documentation for implementation in HEV/EV systems and power supplies.

➀ Fraunhofer IAF developed a monolithic bidirectional 1200 V GaN switch with integrated free-wheeling diodes using GaN-on-insulator technology, enhancing efficiency in EV chargers and renewable energy systems;

➁ The institute also demonstrated a single-gate GaN HEMT as a bidirectional switch for low-voltage 3-level converters, simplifying control in multi-level topologies;

➂ These innovations, along with advancements in GaN power electronics across 48 V to 1200 V classes, will be showcased at PCIM Europe 2025, highlighting Europe's progress in energy transition technologies.

➀ SemiQ Inc.推出了一款新的1200V SiC MOSFET六合一模块，专为电动汽车充电、能源存储、电机驱动和可再生能源平台等高需求应用设计；

➁ 模块集成了坚固的平面技术SiC MOSFET，具备低开关损耗、高功率密度及简化系统集成的特点；

➂ 产品支持连续漏极电流最高达30A，脉冲漏极电流可达70A，尺寸紧凑且可靠性高。

SemiQ has launched three 1.2kV three-phase silicon carbide MOSFET bridge modules in 62.8 x 33.8 x 15mm press-fit six-pack format.

The modules, with power ratings of 20mΩ 263W, 40mΩ 160W, and 80mΩ 103W, are designed for electric vehicle charging, energy storage, and motor drives.

Each module is tested to over 1,350V with 100% wafer-level burn-in.

➀ Infineon Technologies AG has unveiled the world's first industrial-grade GaN transistor family with an integrated Schottky diode.

➁ This innovation, called CoolGaN Transistor G5 series, enhances efficiency and simplifies design for various industrial applications.

➂ It targets telecom, servers, DC-DC converters, USB-C chargers, PSUs, and motor drives, addressing challenges faced by engineers using GaN technology.

➀ This article highlights a job opening for a Hardware Engineer specializing in Motor Controllers at Viridian Ingni Propulsion located in Chennai.

➁ The role involves full ownership of hardware development for motor controllers, including system architecture design, schematic creation, PCB layout review, and overseeing manufacturing processes.

➂ The ideal candidate should have at least 2 years of relevant experience in hardware development, expertise in power electronics, and familiarity with real-time microcontroller-based embedded systems.

➀ Infineon is planning a 100V GaN transistor with an integrated Schottky diode for hard-switched power topologies;

➁ The lack of body diode in GaN-based topologies can lead to higher power losses due to the larger effective body diode voltage;

➂ The new device is designed to reduce dead-time and maintain efficiency by connecting a Schottky diode in anti-parallel with the GaN transistor.

➀ IQE和X-FAB签署了一项联合开发协议（JDA），旨在创建一个基于欧洲的GaN功率器件平台解决方案；

➁ 该协议为期两年，双方将合作开发650V GaN器件；

➂ 该协议将利用IQE的GaN外延设计和工艺专长以及X-FAB的技术开发能力和器件制造能力，为汽车、数据中心和消费应用提供优化的技术-衬底组合。

➀ Mazda and Rohm have signed a deal to develop GaN-based automotive power electronics.

➁ GaN can reduce power conversion losses and contribute to the miniaturisation of components through high-frequency operation.

➂ The collaboration aims to unveil a demonstration model within FY2025 and practical implementation for FY2027.

➀ This article introduces a 12V-60V three-phase GaN inverter reference design from Texas Instruments, which focuses on high efficiency, precise current sensing, and sensorless control for robotics and motor drives.

➁ The design uses three LMG2100R044 GaN half-bridge modules, each capable of handling 100V and 35A, integrating GaN FETs, drivers, and bootstrap diodes to optimize switching performance and reduce parasitic inductance.

➂ Key features include precise current measurement with a 1mΩ shunt resistor and INA241 current sense amplifier, compatibility with C2000 MCUs via a TI BoosterPack compatible interface, and suitability for applications such as robotic servo drives and drone accessories.

➀ MICROTEST has introduced the VIP ULTRA tester, the latest addition to its VIP Extended product line, designed specifically for testing Wide Band Gap (WBG) devices made from Silicon Carbide (SiC) and Gallium Nitride (GaN).

➁ The VIP ULTRA supports multiple configurations with voltage capabilities of 1.7kV or 4kV and current capacities up to 250A, offering high parallelism for testing high-power chips.

➂ This advanced tester is particularly effective for testing high-power chips at the silicon wafer level, ensuring functionality before chip dicing and integration, driven by increasing demands in automotive and industrial sectors.

Strathclyde University has received £9 million from Innovate UK to pursue semiconductor packaging R&D.

The goal is to create an advanced packaging line for power electronic semiconductors that will reduce packaging times from months to days.

Global material shortages, limited manufacturing capacity, and a lack of innovation facilities have left the UK supply chain dependent on international markets for key components, leading to long delays.

➀ Infineon has launched the CoolSiC Schottky diode 2000 V G5 product family, its first discrete SiC diode with a breakdown voltage of 2000V, packaged in TO-247-2.

➁ The product is suitable for applications with DC link voltages up to 1500 V DC, such as solar and EV chargers.

➂ The diode allows for higher power levels and reduced component count, simplifying the overall design.

➀ The Karlsruhe Institute of Technology (KIT) is establishing a unique research environment at the High Power Grid Lab (HPGL) to study the behavior of innovative power grid components under realistic conditions.

➁ The test platform is designed to mimic real power grids and will focus on low and medium voltage networks for regional electricity distribution.

➂ The HPGL is scheduled to be operational by 2030 and is being funded with 32.8 million euros from the Helmholtz Association's strategic expansion investment fund.

➀ Magnachip has introduced 25 Gen6 SJ MOSFETs with improved switching speeds and reduced RSP;

➁ The new products offer enhanced reliability with a Zener diode and smaller chip sizes;

➂ The lineup includes various voltage ratings and package types for high-power efficiency applications.

➀ The PCIM Europe Expo & Conference in Nuremberg, Germany, is the premier international event for power electronics, intelligent motion, renewable energy, and energy management.

➁ As the leading forum for industry and academia, PCIM Europe drives innovation across the entire value chain.

➂ It has been the established home of power electronics for decades.

➀ Swansea University's Centre for Integrative Semiconductor Materials (CISM) is partnering with the SAFEPOWER project to develop efficient MVDC converters.

➁ The project aims to improve energy systems by creating small, eco-friendly MVDC converters for applications such as offshore wind, solar farms, electric vehicle charging, and HPC data centres.

➂ CISM will demonstrate next-generation power chips based on wide bandgap materials like silicon carbide and gallium oxide, aiming to transfer the learning into high-volume manufacturing.

➀ The article discusses the potential of diamond semiconductors to revolutionize power electronics due to their unmatched thermal conductivity and wide bandgap.

➁ Researchers at Saga University have developed the first diamond n-channel MOSFET, demonstrating high field-effect mobility and stability at high temperatures.

➂ Companies like Adamant Namiki Precision Jewel Co, Ltd, Saga University, Element Six, and Cree are leading the way in diamond semiconductor research and commercialization.